Нет обложки

This practical resource offers engineers an in-depth and up-to-date understanding of bipolar transistor RFIC design. Unlike most books on the market that focus on GaAs MESFET or silicon CMOS process technology, this unique volume is dedicated exclusively to RFIC designs based on bipolar technology. Until now, critical GaAs HBT and SiGe HBT process technologies have been largely neglected in reference books. This book fills this gap, providing a detailed treatment of this increasingly important topic.Professionals discover a wide range of circuit topologies that are optimized for maximum performance with bipolar devices. From discussions of key applications (Bluetooth, UWB, GPS, WiMax) and architectures to in-depth coverage of fabrication technologies and amplifier design to a look at performance trade-offs and production costs, this book arms engineers with complete design know-how for their challenging work in the field.

Скачать книгу бесплатно (pdf, 11.40 Mb)

---

Читать «Designing Bipolar Transistor Radio Frequency Integrated Circuits»