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libcats.org
Defects in Microelectronic Materials and DevicesDaniel M. Fleetwood, Ronald D. SchrimpfUncover the Defects that Compromise Performance and Reliability A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO2 interface. It then examines defects that impact production yield and long-term reliability, including:
Take A Proactive Approach Ссылка удалена правообладателем ---- The book removed at the request of the copyright holder.
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